Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To obtain a very small through hole and to have a high accuracy by a method wherein a glass layer is used as an etching resist of a polymide type resin film. CONSTITUTION:The first wiring conductive layer pattern 4 of an Al or the like is formed on the semiconductor substrate 1, on which unhardened polyimide resin 5 is applied and it is hardened by heating. Then, the glass layer 6 (phosphor doped glass or the like) is evaporated using CVD method. The polyimide resin film 5 is completely changed to imide and stabilized by the heat generated at the formation of said glass layer. Then a photo resist pattern 7 is formed, an etching is performed on the glass layer 6 and the polyimide layer successively, and then the through hole 8 is formed. Next, the resist 7 and the glass layer 6 are removed, and the second wiring conductive layer 9 is provided. As a result, an excellent mask matching can be performed because at the time of formation of the resist 7, the first pattern 4 can have a very small through hole, thereby enabling to have a very high accuracy.

Inventors

• 👤 Genichi Adachi
• 👤 Nobuo Mukai

Bibliographic Details