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JPS5615535A Expired / Lapsed JP ⏱️ 0.0 years remaining

Ion source chamber

Assignee: NEC Kyushu Ltd
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Filing: 1979-07-18
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Granted: —
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Expires: 1999-07-18
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Abstract

Abstract PURPOSE:To lengthen the longevity of filament by providing a plurality of gas introduction holes uniformly distributed and single gas exhausting and ion beam- fetching hole in a chamber in which a barlike filament is incorporated. CONSTITUTION:The chamber 11 is housed with the barlike filament 12 connected to the power source 15', and also to the arc power source 16 between the filament 12 and the chamber 11. Also one side of the chamber 11 is provided uniformly with the plural gas introduction holes 13 along the filament 12, and the other side is provided with the single gas-exhausting and ion beam-fetching hole 14. Thus, gas is introduced into the introduction holes 13 uniformly provided and then flowed in an uniformly distributed manner throughout the whole length of the filament 12, so that the degree of the spattering of the filament 12 by means of ion is made uniform and the life of the filament can therefore be lengthened.

Inventors

  • 👤 Yukihisa Taguchi

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-10-28 22:46
CPC Classifications
H; H01; H01J; H01J27/00; H01J27/02; H01J27/022

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