Semiconductor device

Abstract

Abstract PURPOSE:To amplify gate currents sharply by a method wherein a region, a conduction type thereof differs from that of a gate region of a photo-FET, is formed to the gate region thereof, and a trnsistor is formed using the region as an emitter. CONSTITUTION:A P type semiconductor region 13 is built up on a lower surface of an N<-> type semiconductor region 12. A P type semiconductor region 14 functioning as a gate region is formed on the region 12, and an N<-> channel 15 is formed on the region 12 between the region 14 and the region 13. N<+> type semiconductor regions 16, 17 functioning as source and drain regions are built up on the region 12 at the both sides of the region 14. An N<+> type region 18 is formed to the region 14, and a transistor Tr19 is formed between each of the region 18 and the regions 14, 12. In this case, a distance between the region 18 and the channel 15 is designed so as to become smaller than the diffusion distances of electrons injected to the region 19. Thus, photo-currents flowing through a photodiode built up by the regions 18, 14 are sharply amplified by means of the Tr19.

Inventors

• 👤 Michio Arai

Bibliographic Details