Insulated gate field effect transistor couple

Abstract

Abstract PURPOSE:To decrease the difference of threshold voltage of an insulated gate field effect transistors couple by a method wherein the material and the form of the gate electrodes corresponding with each other are made to be identical, and the path form of connecting conductors to the gates are made in the same. CONSTITUTION:Four unitary insulated gate field effect transistors (MISFET's) Q1-Q4 having a drain electrode 7 in common are formed on a p-type substrate 1. At two pairs of unitary MISFET's Q1 and Q4, Q2 and Q3, each source electrode 8 is connected with each other through conductors 11, 13 and each gate electrode is connected with each other through conductors 12, 14 to form two compound MISFET couples connected completely in parallel. The conductor 12 is prolonged to provide a conductor 12a at the neighborhood of a channel region 10 of the unitary MISFET Q1, and the conductor 11 is prolonged to provide conductors 11a, 11b to make the effect of those conductors to the unitary MISFET's to be equal.

Inventors

• 👤 Tamio Murano

Bibliographic Details