Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To obtain an oxidation-resisting mask which is thick, durable and free from crystal defects by piling Si3N4 formed by plasma reaction on Si3N4 formed by thermochemical reaction. CONSTITUTION:The Si3N4 formed from SiH4 and NH3 by thermochemical reaction is readily cracked. Therefore, Si3N4 formed by plasma reaction, which is hardly cracked, is piled thereon. By said constitution, an Si3N4 structure which is thick and hardly cracked can be obtained. In addition, the film thickness automatically decreases at the pattern end of the Si3N4 film, so that thermal stress decreases, and because the stress, which is applied to the Si substrate when it goes it and out a high-temperature oven owing to the thermal expansion coefficient difference, is made small, an SiO2 structure having fewer defects can be selectively formed.

Inventors

• 👤 Fujiki Tokuyoshi

Bibliographic Details