Device for growing semiconductor at gas phase

Abstract

Abstract PURPOSE:To prevent grown layers from becoming nonuniform in the direction of gas flow, by rotating a heating jig, whereon wafers are set, on a plane parallel with the direction of gas flow. CONSTITUTION:A holder 2 is rotated at a speed about a half revolution per second by a magnet 7 centering a rotary shaft 6 on a plane parallel with the flow of gas. The direction of the rotation is reversed in every five seconds. A space with a uniform thickness of about 10cm is defined between the holder 2 and the lid 1 of a reaction furnace to prevent the gas from nonuiformly flowing. According to this constitution, the raw material gas is introduced at a speed ratio of 3:5:3 from three pipes 4 and flows along parallel streamlines and is discharged 5. As a result, wafers do not become different from each other due to the upstream and the downstream effects of the gas flow, while each wafer is not affected by the direction of the gas flow, and the thickness of grown layers and the distribution of impurity concentration are made uniform.

Inventors

• 👤 Takashi Aoyama
• 👤 Takaya Suzuki
• 👤 Hironori Inoue

Bibliographic Details