Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To improve the integration and the yield of a semiconductor device by covering a polycrystalline silicon on the top of a high melting point metal and a silicon nitride on the side surface. CONSTITUTION:A field oxide film 22 is formed on a P type silicon substrate 21, and a gate oxide film 23 is formed on an active region. Subsequently, a gate electrode 27 formed of polycrystalline silicon, manganese and polycrystalline silicon is formed. Thereafter, a shallow source and drain diffused region 28 is formed in the substrate 21, and a silicon nitride film 30 is formed on the side surface of the electrode 27. After a PSG31 is then formed, it is heat treated, thereby forming a deep source and drain diffused region 32 in the substrate 21 and concurrently sufficiently smoothing the PSG31.

Inventors

• 👤 Tadashi Mori

Bibliographic Details