Manufacture of mos-type semiconductor device

Abstract

Abstract PURPOSE: To manufacture a high-density MOS device by covering the gate end part with an insulating film to prevent the distortion at the end part. CONSTITUTION: Field oxide film 2 is formed on p-type Si substrate 1, and gate oxide film 3 is formed on n-layer 4. And conductive poly Si5 is piled on them. Then heat oxide film 9 is formed by 2-layer mask 8 of oxide thin film 6 and nitride film 7, and poly Si gates 13∼15 are formed via resist masks 10∼12. The resist is then removed, and 2-layer film 16 of the nitride thin film and the oxide thick film is h 0 -formed. Thus, hS-lamination is secured at the side surfaces of gates 13∼15. Then the etching gas is injected vertically to the substrate to etch film 16 as well as to expose the surface of substrate 1. As a result, film 16 remains at side surface 161, securing the round corner area. Diffusion layers 17∼19 are formed to be coated with film 20 thinner than oxid film 161 with openings 22∼25 drilled selectively, thus Al wirings 26∼28 being formed. In this way, no distortion is caused since the gate side surface contains a laminated film, and an opening is formed at the connection part through the self-matching against the gate. Thus, the increment of the gate area is not needed, thus ensuring a high density COPYRIGHT: (C)1979,JPO&Japio

Inventors

• 👤 Takeya Ezaki
• 👤 Onori Ishikawa

Bibliographic Details