Semiconductor device

Abstract

Abstract PURPOSE:To obtain a monolithic semiconductor element small-sized by a method wherein on one semiconductor substrate are mounted having a life time higher than 1 and a diode made low in life time by diffusing killers while being isolated at distance larger than the thickness of the substrate. CONSTITUTION:A P type layer 2 is epitaxially grown on an N type semiconductor substrate 1, being covered with an SiO2 film 3, perforated a prescribed hole and diffused with an N type impurity to form a plurality of N type 4 for the transistors use. Then, the film 3 is perforated the hole for forming the diode which is required for a high speed switching characteristic, while being isolated as long as the distance (l) larger than the thickness (d) of the substrate 1 from the thus obtained transistor 6 of more than 1 in the life time, the N type impurity and the life time killer of gold, copper, iron, nickel, platinum of the like are continuously diffused to cause the diode 7 of the low life time to be grown. Thereafter, as usual, Al electrode 5 are formed on the respective elements.

Inventors

• 👤 Takao Emoto
• 👤 Takashi Nishizawa

Bibliographic Details