Supperssion of thermal denaturation of compound semiconductor

Abstract

Abstract PURPOSE:To prevent the thermal denaturation of the III-V group compound semiconductor in the Periodic Table due to the heat treatment thereof by heat treating the semiconductor in an atmosphere containing alkyl compound vapor of the V group elements in the Periodic Table. CONSTITUTION:GaAs to which Si ion is, for example, injected is annealed at 850 deg.C in hydrogen gas containing trimethyl arsine in concentration of 50-1,000ppm for 20min. Thus, predicted activation rate and impurity profile can be obtained without surface deterioration. The effect of suppressing the thermal denaturation can be also obtained when the liquid phase epitaxial growth of the III-V Group compound semiconductor in the Periodic Table is conducted in alkyl compound vapor or when the diffusion to the III-V compound semiconductor in the Periodic Table is conducted in the alkyl atmosphere.

Inventors

• 👤 Hisatsune Watanabe

Bibliographic Details