Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To separate elements from other elements in high precision without an appearance of defects by selectively injecting to a substrate the impurity ions which form an insulator under the reaction to Si at high temperature and treating the same at high temperature in an inactive gas. CONSTITUTION:An n type Si is applied with a resist mask 7 to form an O<+>-ion injected layer 8. The resist film can be formed easier and in higher precision than Si3N4. Removal and treatment of the mask by O2 plasma at high temperature in N2 bring the O<+>-ions in the reaction to Si to form an oxidized film 9, a lateral reaction by the external atmosphere not taking place, a strain seldom appearing except in the separated layer and no crystal defect being produced. According to conditions of the O-ion injection and of the heat treatment, the oxidized film 9 of Si2O3 and the like containing O in a low ratio after than SiO2 is produced as well. A p layer 4 is formed as the mask of the film 9 and a poly-Si electrode 6a is formed which extends over a part of the surface of SiO25 and the film 9. With this construction, the elements separated layer can easily be formed in high precision.

Inventors

• 👤 Masahiko Denda
• 👤 Shinichi Sato
• 👤 Kazuo Ito
• 👤 Natsuo Tsubouchi

Bibliographic Details