Target for sputtering

Abstract

Abstract PURPOSE:To prevent the thermal fracture of target due to the rise of film-forming speed, etc., by interposing an indium layer or a solder layer between cathode and target. CONSTITUTION:The indium layer 18 in the melted state is formed on the surface of the cathode body 11 heated in advance, and the metalized layer 19 of chromium- gold, chromium-titanium, etc., is formed by deposition on the surface to be coated of the target 17 of ceramic, glass, synthetic resin, etc., and the molten indium layer 18 is further formed on the metalized layer 19. Then, the indium layers 18 on the cathode body 11 side and the target 17 side are adhered to each other and then solidified by cooling. Or, a solder layer is formed instead of the indium layer. The formation of such a target structure for sputtering enables one to prevent the thermal fracture of the target 17 even in case where greater high-frequency power is applied to the cathode body 11.

Inventors

• 👤 Koji Nishiyama
• 👤 Takeshi Nakamura
• 👤 Suehiro Kato
• 👤 Kenji Ando

Bibliographic Details