Compound semiconductor field-effect transistor

Abstract

Abstract PURPOSE:To reduce gate Schottky leakage current and increase avalanche breakdown voltage by providing, between an active layer and a gate metal, a compound semiconductor layer having a forbidden band wider than the forbidden band of the compound semiconductor constituting the active layer. CONSTITUTION:High resistance InP buffer layer 11, In0.73Ga0.27As0.6P0.4 active layer 12 with forbidden band 0.9eV, and GaP0.4Sb0.6 layer 13 with forbidden band about 1.45eV are epitaxially grown in laminate on InP substrate 10. Next, gate electrode 14 is formed in the center of layer 13. By removing the part surrounding layer 13, layer 12 is exposed in a ring form. Ohmic contact electrode 15 is coated on this exposed part. By this, it is possible to obtain good transistor characteristics easily, with the height of the Schottky barrier about 1.0eV, gate leakage current 1.0muA or less, and gate breakdown voltage 15V or higher.

Inventors

• 👤 Hisatsune Watanabe
• 👤 Fumio Hasegawa

Bibliographic Details