Preparation of photoelectric transducer

Abstract

Abstract PURPOSE: To enhance the activation energy of an amorphous Si thin-film, and to improve the efficiency of photoelectric conversion, by keeping the temperature of a conductive substrate within a specified range when forming the amorphous Si thin-film by spattering Si onto the substrate by means of high frequency in a hydrogen atmosphere. CONSTITUTION: An amorphous Si film 102 is made up on a surface of a substrate 101, which has a conductive layer 105 building up a Schottky barrier on a surface of a support body 104, by means of high-frequency spatterring. The thin-film 102 consists of a non-dope layer 107, which forms a barrier with the conductive layer 105 by a boundary layer 106, and a layer 108 doped, and the doped layer 108 forms an ohmic contacts with a conductive thin-film 103 mounted onto the layer 108. Since the amorphous Si film is brought to a condition near to an intrinsic semiconductor by maintaining the temperature of the substrate 101 in the case when making up the amorphous Si by means of high-frequency spatterring within a range of 80∼240°C, localized condition density in an energy gap becomes minimum, and activation energy becomes maximum. COPYRIGHT: (C)1980,JPO&Japio

Inventors

• 👤 Akio Azuma
• 👤 Kazuhiro Kawajiri
• 👤 Yasusuke Nakajima

Bibliographic Details