Semiconductor pressure converting element

Abstract

Abstract PURPOSE: To improve accuracy and reliability, by providing a pressure-receiving diaphragm section with a convexity continuously rising from the circumferential edge toward the center, and also by providing strain gages in circumferential edge region on the other side. CONSTITUTION: One side of an n-type Si substrate is provided with a convexity which continuously rises from circumferential section 11a toward the center. Circumferential section 11a toward the center. Circumferential edge surface of a diaphragm section 14 on the other side of the convex surface is provided with p-type strain gages 12 and 13 formed by dispersion of impurity. When a pressure p is applied to this surface, since Si crystal surface and the length-wise direction of the strain gages are pre-determined, resistances of the gages 12 and 13 are turned into plus and minus sides, respectively. When these gages are attached to 2 sides of a wheatstone bridge and ratio of thickness between the diaphragm's center and the circumfernetial edge is set to the optimum, rectilinear performance of strain characteristics toward pressure can be made almost zero. COPYRIGHT: (C)1980,JPO&Japio

Inventors

• 👤 Tadahiro Hayashi
• 👤 Bunshirou Yamaki

Bibliographic Details