Treating method of semiconductor surface with heat

Abstract

Abstract PURPOSE: To uniformly and efficiently heat the surface of a semiconductor, by irradiating the surface with a pulse of light from a xenon lamp. CONSTITUTION: Light of a xenon lamp is condensed and irradiated as a pulse upon the entire surface a silicon wafer to instantaneously heat the surface. When the capacity of the xenon lamp is small, the light is condensed to the size of a single chip 2 and irradiated upon a region 4 except for a scribed region. The light can be shaped by an aperture between the light source and the wafer to make the distribution of the light uniform, or patterned heat treatment can be effected by a mask. The surface of the semiconductor is heated instantaneously and effectively enough for the annealing of a shallow ion-implanted layer, removal of surface crystal defects or the like. COPYRIGHT: (C)1980,JPO&Japio

Inventors

• 👤 Seiichi Iwamatsu

Bibliographic Details