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JPS5568633A Expired / Lapsed JP ⏱️ 0.0 years remaining

Method and device for back etching of semiconductor substrate

Assignee: Fujitsu Ltd
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Filing: 1978-11-20
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Granted: —
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Expires: 1998-11-20
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Abstract

Abstract PURPOSE: To reduce the scattering in the etching of semiconductor substrates, by etching the substrates in an etching liquid while revolving the substrates and cooling the etching liquid by bubbling of inert gas. CONSTITUTION: A substrate cassette 13 is provided just over bubbling nozzles 9. When bubbles of an inert gas are supplied from nozzles 16 to vanes 14, 14' mounted on both the ends of the shaft 12 of the cassette 13, the cassette is rotated. Semiconductor substrates 4 and set on a holder 18 and fixed by stoppers 19. The back etching of the substrates is effected in an etching liquid while the substrates are revolved and the etching liquid is cooled by bubbling from a cooling pipe 7. Since the etching liquid is cooled throughout the etching operation, the lifetime of the liquid is lengthened and the scattering in the etching of the substrates is greatly reduced. Therefore, the etching liquid is economized. COPYRIGHT: (C)1980,JPO&Japio

Inventors

  • 👤 Shinichi Miyashita
  • 👤 Shigeru Terada
  • 👤 Yasuo Arima
  • 👤 Yoshikazu Taniguchi

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-07 09:57
CPC Classifications
—

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References Cited (Backward Citations)

JPS4810532U Cited
JPS5339872A Cited
JPS53101278A Cited

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