Pattern forming method

Abstract

Abstract PURPOSE: To obtain a resist pattern in high accuracy for a short time, by collectively preparing a pattern, which is a size smaller than fixed dimensions, by exposure when forming the resist pattern, and by additionally preparing a pattern in a peripheral portion needing precision by exposure by electron beams. CONSTITUTION: When preparing a resist pattern 21, which width is a and which consists of a square AWD, a resist pattern 31 is first prepared by collectively exposing a mask of a square A'WD' with width c, which is a size smaller than the pattern 21. In this case, the relationship of a=2b+c, c≥d is formed among width a and c, contraction allowance b and photo-exposure minimum dimensions d, and a pattern in c<d is not used. Thus, a pattern 31', which is a size smaller than the pattern 21, is left on a substrate 10, and the peripheral portion is coated with a resist 50 for electron rays and pre-baked. And the precise pattern consisting of AWD, which buries the circumference 51 of the pattern 31', is gained by exposing the resist 50 by electron rays and by developing the resist. COPYRIGHT: (C)1980,JPO&Japio

Inventors

• 👤 Kunimitsu Fujiki

Bibliographic Details