Semiconductor joining laser forming method

Abstract

Abstract PURPOSE: To obtain a high-conversion-efficiency semiconductor joining laser by enclosing an activation layer with low-reflectivity substances completely. CONSTITUTION: An n-type Al 0.3 Ga 0.7 As 10, a GaAs 11 and a p-type Al 0.3 Ga 0.7 As 12 are piled on an n-type GaAs 9 in layers and the layer 12 is provided with grooves having a width of 20μm and reaching the layer 11. And the layer 11 is melt-backed, it is stopped when reached the layer 10's surface, and a p-type Al 0.3 Ga 0.7 Al 13 and an n-type Al 0.3 Ga 0.7 As 14 are piled in layers. By using a constant growth temperature and a constant cooling speed, crystal surface is flattened. Since epi-growth does not occur on the surface of AlGaAs which has been once aerated, no growth layer is formed on the layer 12 by the 2nd epi-formation. And then, electrodes 18 and 19 are prepared. When the groove width is less than 100μm, an embedded type jointing laser can be easily formed with high reproducibility and recovery, and if the electrode 18 is positive, the most part of the current needed for radiation of the activation layer is caught by the layer 15, conversion efficiency is heightened. COPYRIGHT: (C)1980,JPO&Japio

Inventors

• 👤 Isamu Sakuma

Bibliographic Details