Mos type dynamic memory unit

Abstract

Abstract PURPOSE:To miniaturize a unit by miniaturizing memory cells and dummy cells and also to reduce the occupation area on the whole. CONSTITUTION:The 1st sense amplifiers 20, 22, 24, and 26 are arranged away from and opposing to the 2nd sense amplifiers 21, 23 and 25 and bit lines 27, 28, 32, and 33 connected to the 1st sense amplifiers and extending to certain positions of the 2nd sense amplifiers are laid at intervals in parallel to bit lines 29, 30, 31, and 34 connected to the 2nd sense amplifiers and extending to certain positions of the 1st sense amplifiers. Through the arrangement like this, memory cells 40-51, and dummy cells 53-60 are miniaturized, even if sense amplifiers 20-26 are relatively large, to integrate highly a memory unit in a word-line direction which affects greately the degree of the integration, thereby miniaturizing the unit.

Inventors

• 👤 Toru Furuyama

Bibliographic Details