Pattern exposing method

Abstract

Abstract PURPOSE:When light is irradiated on an electron beam resist to form a pattern, to combine electron beam exposure with far ultraviolet ray exposure thereby to remove influences due to proximity effect and to evade the lowering of the pattern precision. CONSTITUTION:The far ultraviolet ray radiation and electron beam radiation in the photosensitive wave length range of an electron beam resist are combined with each other, and the resist film is doubly subjected to exposure treatment. Now, when an electron beam of a specific width a is radiated on the electron beam resisting film 1, the lower part of the film 1 comes to have a width b widened by the back scattering within the film 1. Accordingly, at a place where patterns approach the patterns assume a connected state by the proximity effect. As a result, after parts of patterns 2, 3 and 5 are exposed by electron beams, only the part of the pattern 4 is subjected to far ultraviolet ray exposure by use of a mark exposing only the part of the pattern 4 and exposed doubly to prevent influences due to the proximity effect.

Inventors

• 👤 Koji Igarashi

Bibliographic Details