Semiconductor device

Abstract

Abstract PURPOSE: To provide the subject device wherein a second SiO 2 film, a semiconductor layer, and a first SiO 2 film are formed on the lower surface of a semiconductor substrate, and a capacitor is constituted by the substrate and the second SiO 2 film thereby to form the capacitor of a large capacity into an IC. CONSTITUTION: When a capacitor is formed in a P-channel MOS type transistor, a SiO 2 film 12 is firstly applied on an N-type Si substrate 1 by ion injection while adjusting the dose of O 2 . Then, on the film an N-type layer 1 is caused to grow to form again a SiO 2 film 11 thereon, and further the N-type layer 1 is caused to grow thereon. Thereafter, P-type source and drain regions 3 and 4 are diffusion- formed in the uppermost layer 1, and electrodes 7 and 8 are fitted thereto, and a gate electrode 6 is formed on the layer 1 between the regions 3 and 4 through a gate SiO 2 film 5 and a field SiO 2 film 2 is applied on other layer 1. Then, a capacitor electrode 13a reaching the second layer 1 is implanted in the end of the film 2, and a capacitor electrode 13b is provided on the back surface in correspondence to said electrode 13a, and a PSG film 9 and a SiO 2 film 9 are applied on the front surface. COPYRIGHT: (C)1980,JPO&Japio

Inventors

• 👤 Yoshikazu Kojima

Bibliographic Details