Manufacturing of infrared detection array element

Abstract

Abstract PURPOSE: To manufacture a very small area and high precision of element in large yield by forming a convex height on the surface of a semiconductor crystal, applying an organic resin thick thereon to hardening and forming a light receiving face throuth etching the bottom of the convexity. CONSTITUTION: A convex array is formed through etching on the surface of a semiconductor crystal 3 working as a material. Next, an organic insulating resin 4 is applied thick to harden on overall top of the convexity. Then, that for which the crystal 3 and the resin layer 4 are combined is fixed on an insulating support substrate 2 with an adhesive with the resin layer coming down. Next, the bottom of the crystal 3 is etched to form a infrared ray receiving face 5. An ohmic electrode 6 and an electrode wiring 7 are formed on both ends of the light receiving face 5. Then, a ringing circuit is connected thereto. Since the light receiving face 5 and the face of resin layer 4 are kept even in this case, no breakage will be involved on the wiring. Now a very small area and high precision of element can be manufactured in large yield, and moreover the ringing circuit can be mounted on the same substrate. COPYRIGHT: (C)1980,JPO&Japio

Inventors

• 👤 Hiroo Nagasaka
• 👤 Junichi Ando
• 👤 Mitsue Kikuchi

Bibliographic Details