Lead material for semiconductor

Abstract

Abstract PURPOSE: To eliminate peeling due to oxidation in the lead material made of Cu with a heat resistibility and a softness by adding one or more kinds of Al, Mn and Si in an amount of 0.005W0.2% by weight with P exceeding no more than the content of unavoidalbe impurities. CONSTITUTION: One or more kinds of Al, Mn and Si in an amount of 0.005W 0.2% by weight is added to a Cu lead material containing small amount of Ag, provided that P contained exceeds no more than the content of unavoidable impurities. Raw material with such a composition is cast into an ingot in a proper size which is cut on the both surfaces after a hot rolling. Then following repetition of cold rolling, medium annealling, and pickling, it is cold rolled to the final thickness to make a lead material. In this manner, after it is heated up to 450°C for 15 minutes and cooled down to a normal temperature, a bending test shows that the rate of peeling can be reduced to zero, negligible if any. COPYRIGHT: (C)1980,JPO&Japio

Inventors

• 👤 Rensei Futatsuka
• 👤 Akio Takahashi
• 👤 Hisashi Nemoto

Bibliographic Details