Semiconductor laser

Abstract

Abstract PURPOSE: To reduce the leakage current and enable the continuous oscillation by laminating the prescribed layer after newly setting p-type GaAs layer or p-type GaAlAs layer or an insulating layer on the n-type GaAs base consisting a semiconductor laser. CONSTITUTION: A p-type GaAs or p-type GaAlAs or insulating layer 8 will be addingly formed on n-type GaAs base 1. After that, according to the normal method, n-type GaAs layer 2, n-type GaAs layer 3, n-type GaAlAs layer will be laminated to make an epitaxial growth. Next, Zn will be diffused unit it penetrates into the layer 2 to grow pn junction 7 and use the undersurface region 9 of the junction 7 as a channel region. By doing so, the leakage current tending to travel through the junction 7 will be restricted to the narrow region 9 lying between the layers 2 and 8, the current travelling to the diode will concentrate on the side jnuction 7 to lower the threshold value current, as well as the temperature changing rate. COPYRIGHT: (C)1980,JPO&Japio

Inventors

• 👤 Etsuji Omura
• 👤 Toshio Murotani
• 👤 Jun Ishii

Bibliographic Details