Dry etching apparatus

Abstract

Abstract PURPOSE: To control the completion of etching automatically and exactly by detecting a chemical luminescence generated from material being etched during etching operation in a dry etching apparatus separated into a plasma generating chamber and an etching chamber. CONSTITUTION: The gas plasma-generating chamber 1 and the etching chamber 2, both being connected to each other with the orifice 3, are vacuumized, and CF 4 and O 2 are supplied to the plasma-generating chamber 1 and its vaccum degree is regulated to approx. 0.3 torr. A high frequency voltage is applied across the electrodes 5 and 6 to dissociate gas by discharge and the gas plasma 8 so generated is introduced into the etching chamber 2 where the material 9 to be etched is etched. A chemical luminescence generated upon the etching operation is detected by the photo-sensor 11 and then put in the comparator 13 through the amplifier 12. At the comparator 13, it is compared with a set value from setter 14 and the completion of etching is detected in the form of a compared value. Then, the relay 15 is operat ed to stop the application of voltage from the high frequency power source 7 and thereby to stop etching automatically and exactly. COPYRIGHT: (C)1980,JPO&Japio

Inventors

• 👤 Takeo Kaminaga
• 👤 Yasuhiro Horiike

Bibliographic Details