Method of manufacturing schottky barrier-gate type electric field effect transistor

Abstract

Abstract PURPOSE:To eliminate short-circuit when wiring a lead wire and to improve the production yield by making a lead wire wiring electrode of salient electrode structure and by arranging it higher than a base surface. CONSTITUTION:To form an active layer 3 on an semiinsulating Ga-As base 2 and an insular source electrode 4 as well as a gate electrode having a Schottoky contact with a drain electrode and the active layer 3. To form a salient electrode 13 facing a source electrode 4 through a metallic contact. By doing so, there is no danger that the source lead wire will contact the drain electrode as well as the gate electrode.

Inventors

• 👤 Michihiro Kobiki
• 👤 Shigeru Mitsui
• 👤 Manabu Watase
• 👤 Masaaki Nakatani
• 👤 Saburo Takamiya

Bibliographic Details