Voltage comparing circuit

Abstract

Abstract PURPOSE:To obtain a large voltage gain under the minimum state of an input offset voltage, by using a differential amplification part, a linear amplification part, and so on which are constituted by single channel-type MOSFETs. CONSTITUTION:In a circuit using N channel-type MOSFETs, the source potential of MOSFETQ16, Q17 agress with the source potential of MOSFETQ19 or Q18 in case of differential input V1=V2 if channel modulation of MOSFETQ15, Q20 for constant-current source is ignored, and this potential becomes output bias voltage Vd of output voltage Vod of differential amplification part 1, and this potential is used to bias gates of load MOSFETQ3, Q5,... of the linear amplification stage. Meanwhile, though the output of the differential amplification part is input to the gate of MOSFETQ1 of conversion part 5, drain potentials of load FETQ2, Q4,... are equal to one another and are on DC operating points of respective linear amplification stages because load MOSFETQ1, Q3,... and driving MOSFETsQ2, Q4,... have the same characteristic. Consquently, a large voltage gain can be obtained by increasing the number of amplfication stages of linear amplification part 3 without increment of the input offset voltage.

Inventors

• 👤 Tetsuya Iida
• 👤 Kenro Sakagami

Bibliographic Details