Semiconductor device

Abstract

Abstract PURPOSE:To prevent damage of a semiconductor device due to current concentration by forming holes opposed in comb-like shape at the insulating film on a base and an emitter with comb-like shape portions and forming electrodes extended through the film and the holes as a line bonding pad. CONSTITUTION:An SiO2 film 9 is formed on the base and the emitter junction surface including the comb-like portion formed by the base layer 2 and the emitter layer 3 on a semiconductor substrate 1, and a base connecting hole 10 and an emitter connecting hole 11 are formed corresponding to the comb-like portion. No connecting portion is formed at the portion 12 where the finger of the base is partly superimposed with the line bonding pad at the emitter side. Aluminum base and emitter electrodes 4 and 5 are formed through the holes 11 thereon, the electrode 4 is partly extended on an SiO2 film on the base finger and used as the emitter side line bonding pad 13. When the emitter is thus divided, the current is dispersed and reduced in concentration, the safety operating region characteristics are improved particularly in case of reveser bias.

Inventors

• 👤 Hirokazu Yamamoto

Bibliographic Details