Reluctance unit and manufacturing method thereof

Abstract

Abstract PURPOSE: To simplify a manufacturing process and raise the sensitivity of a reluctance unit, by coating a thin film of Ni, Co, Bi or the like to provide a magnetic material. CONSTITUTION: An SiO 2 film 2 is produced on an si substrate 1. A thin film 3 of Ni, Co, Bi or their alloy is produced. Electrodes 4a, 4b and a protective film 5 are provided. When a magnetic field is applied to the assembly of these members, its crystallographic axis is shifted as the (111) plane is oriented in the direction of the magnetic field as to the thin film of Ni or the plane (001) plane is oriented in the direction of the magnetic field as to the thin film of Co. The electric resistance continuously varies depending on the change in the magnetic field. This results in providing a relutance unit of high sensitivity. When Ni or Co is used alone, the resistance decreases with the increase of the magnetic field. COPYRIGHT: (C)1980,JPO&Japio

Inventors

• 👤 Sumio Imaoka
• 👤 Sanji Kawashiro
• 👤 Shinichi Suzuki

Bibliographic Details