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JPS5497584A Expired / Lapsed JP ⏱️ 0.0 years remaining

Single crsystal manufacturing apparatus

Assignee: Toshiba Corp
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Filing: 1978-01-19
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Granted: —
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Expires: 1998-01-19
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Abstract

Abstract PURPOSE: To permit the manufacture of dislocation-free single crystal of excellent processability at lower cost by growing single crystal from molten metal passing through base frame of Rh-containing pt in a LiTaO 3 piezoeletric single crystal- manufacturing apparatus. CONSTITUTION: The raw material of LiTaO 3 is put in a noble metal crucible 1 and then heated by electrically energizing a high frequency work coil. When the raw material is melted, the melt of LiTaO 3 comes out of the tip 6 of the base frame 4 regulating the shape of crystal growing in the melt 9 by means of the capillarity of the aperture 11. The base frame is made of a platinum alloy composed of 15 to 50 wt% rhodium and platinum. Then, the seed crystal 7 is brought into contact with the melt at the base frame tip 6 and then continuously pulled up to obtain LiTaO 3 single crystal. COPYRIGHT: (C)1979,JPO&Japio

Inventors

  • 👤 Tsuguo Fukuda
  • 👤 Hitoshi Hirano

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-10-25 22:25
CPC Classifications
—

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