Patent JPS548988A successfully refreshed from Google Patents.
JPS548988A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Fujitsu Ltd
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Filing: 1977-06-23
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Granted: —
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Expires: 1997-06-23
Abstract
Abstract PURPOSE:To make it possible to erase written information easily, by using a film of Si3 N4, Al2O3, etc., whose band gap against poly-crystal Si constituting an electrode is smaller than that of SiO2 as an insulating film separating the 1st gate electrode from the 2nd one for a FAMOS element in the double-gate structure.
Inventors
- 👤 Kazunari Shirai
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-03 08:02
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/68; H10D30/681; H10D30/684; H10D30/686
Claims Analysis
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