Patent JPS5488780A successfully refreshed from Google Patents.
JPS5488780A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Method of fabricating complementary mos transistor
Assignee: CHO LSI GIJUTSU KENKYU KUMIAI
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Filing: 1977-12-26
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Granted: —
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Expires: 1997-12-26
Abstract
No abstract record available.
Inventors
- 👤 Takanori Tsujimaru
- 👤 Tooru Mochizuki
- 👤 Kenji Shibata
- 👤 Takamaro Mizoguchi
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-06 08:33
CPC Classifications
B; B25; B25J; B25J9/00; B25J9/10; B25J9/104; B25J9/1045; B25J17/00; B25J17/02; B25J17/0241; B25J17/025
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
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