Patent JPS54882A successfully refreshed from Google Patents.
JPS54882A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Manufacture of field effect transistor
Assignee: Fujitsu Ltd
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Filing: 1977-06-03
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Granted: —
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Expires: 1997-06-03
Abstract
Abstract PURPOSE: To reduce the gate length and then to enhance the high frequency properties, by forming a gate electrode through multi-layer lamination of more than two different kinds of metal by use of the self-alignment system. COPYRIGHT: (C)1979,JPO&Japio
Inventors
- 👤 Toshio Usui
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-06 12:26
CPC Classifications
—
Claims Analysis
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References Cited (Backward Citations)
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