Patent JPS548475A successfully refreshed from Google Patents.
JPS548475A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Manufacture for semiconductor
Assignee: Fujitsu Ltd
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Filing: 1977-06-22
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Granted: —
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Expires: 1997-06-22
Abstract
Abstract PURPOSE: To increase the dielectric strength between the source and the drain of MOS element, by forming the source and drain region by diffusion after forming the mask layer to impurity diffusion around the active region, and by blocking the contactness of these regions to the channel stopper. COPYRIGHT: (C)1979,JPO&Japio
Inventors
- 👤 Junichi Mogi
- 👤 Kiyoshi Miyasaka
- 👤 Fumio Baba
- 👤 Tomio Nakano
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-29 06:50
CPC Classifications
—
Claims Analysis
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References Cited (Backward Citations)
JPS4839177A
Cited
JPS50105278A
Cited
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