Semiconductor device

Abstract

Abstract PURPOSE:To secure protection for the gate insulating film against the overvoltage caused by the static electricity and other factors by carrying out the connectio between the Al external lead-out electrode and the input draw-out poly-crystal Si wiring on the thick oxide film and furthermore securing a space of over 10mum for the joints across the wiring. CONSTITUTION:Protective resistance region 19 is formed through diffusion on semiconductor substrate 27, and SiO2 film 24 is provided on the entire surface. The thickness of film 24 is reduced on rigion 19, and the both end surface of region 19 are exposed. Then poly-crystal Si wiring layer 17 doped with the impurity plus layer 20to become the gate electrode later are coated from the exposed area through onto film 24 at region 19, and gate oxide film 25 is coated over these layes. Hole 18 is drilled to film 25 on Si layer 17 at one side, and Al external lead-out electrode 16 connecting to layer 17 is coated with position-matching to film 24 and piercing through hole 18. In this case, a distance of over 10mum is secured between hole 18 and joint 21 of layer 17 and region 19. As a result, film 25 is never broken down even with the fusing of electrode 16.

Inventors

• 👤 Yutaka Onda
• 👤 Hideto Goto

Bibliographic Details