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JPS546789A Expired / Lapsed JP ⏱️ 0.0 years remaining

Semiconductor light emitting device

Assignee: NEC Corp
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Filing: 1977-06-17
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Granted: —
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Expires: 1997-06-17
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Abstract

Abstract PURPOSE: To form both the p- and n-type electrodes within the same plane as well as to form a number of lasers within the same plane in an electrically independent way. COPYRIGHT: (C)1979,JPO&Japio

Inventors

  • 👤 Yoshinari Matsumoto
  • 👤 Isamu Sakuma

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-10 02:23
CPC Classifications
—

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