Semiconductor device

Abstract

Abstract PURPOSE: To considerably increase the corrosion resistance of aluminum wirings by completely covering the aluminum wirings on the semiconductor device with a titanium thin film. CONSTITUTION: Titanium 4 is evaporated by electron beam evaporation on a semiconductor substrate which has aluminum wirings 3 having been patterned by a photoethcing process and patterns covering the wiring patterns and thicker than the wiring patterns are formed thereon through negative type photo resist, after which titanium is etched. Thereafter, a PSG layer 5 is formed by a CVD process and is then removed of the required portions of the PSG layer over electrodes, enabling conduction to external leads to be taken. COPYRIGHT: (C)1979,JPO&Japio

Inventors

• 👤 Genichi Adachi
• 👤 Kyozo Ide

Bibliographic Details