Semiconductor device and its manufacture

Abstract

Abstract PURPOSE: To secure easy and assured formation of the electrode on the shallow diffusion layer on the Si substrate by means of Al containing Ge. CONSTITUTION: Ge belongs to the same group as Si with the similar physical properties in terms of the crystal structure, the band structure and others. Perticularly, the Al-Ge 2-dimensional alloy state diagram features the same eutectic reaction type as Al-Si, and furthermore the temperature forming the Al-Ge solid fusion phase is identical to the temperature range of the Al-Si group solid fusion phase. Therefore, if Ge is contained from the beginning into the Al wiring film evaporated, the amount of Si of the substrate flowing into the electrode and intruding into the substrate can be reduced greatly in the subsequent heat treatment of the electrode. Thus, the Al piercing never occurs through the heat treatment even at the shallow junction layer COPYRIGHT: (C)1979,JPO&Japio

Inventors

• 👤 Masanori Fukumoto
• 👤 Takashi Osone

Bibliographic Details