Patent US5681094A successfully refreshed from Google Patents.
Patent JPS5459074A successfully refreshed from Google Patents.
JPS5459074A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Toshiba Corp
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Filing: 1977-10-20
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Granted: —
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Expires: 1997-10-20
Abstract
Abstract PURPOSE: To ensure formation of the high-resistance layer with good control performance by forming selectively the F + -ion injecting area to the N-type region. CONSTITUTION: The F + ion is injected selectively to the N-epitaxial layer on the P- type substrate with 60KeV and 5×10 14 cm -2 and via the siO 2 film of about 1500Å. And a 5.5-hour treatment is given in the N 2 atomosphere of 1200°C. As a result, a high-resistance layer of 4.7×10 7 Ωcm is obtained, and the unevenness within the substrate can be reduced down to ±3.6% or less COPYRIGHT: (C)1979,JPO&Japio
Inventors
- 👤 Shunichi Kai
- 👤 Masaharu Aoyama
- 👤 Kuniaki Kumamaru
- 👤 Toshio Yonezawa
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-02 23:41
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10D; H10D1/00; H10D1/40; H10D1/43; H10D62/00; H10D62/80; H10D62/83; H10D62/834; H10P30/208; H10W; H10W10/00; H10W10/01; H10W10/031; H10W10/30
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