Semiconductor device

Abstract

Abstract PURPOSE: To prevent the generation of a negative resistance due to a multiplication phenomenon is a high electrical field by inserting a P-type high-density layer into a MOS-type field effect transistor. CONSTITUTION: Onto n-type resist substrate 1, n-type layer 2 containing impurity phosphorus is formed and impurity boron is diffused to form P region 3. At the same time, P-type high density region 10 is also formed. Then n-type region 4 is diffusion-formed through an ordinary planar process. Next some part of heat-oxidized film 8 is removed to form V-shaped groove 11 and heat-oxidized film 5 is formed sequentially, on which Al gate electrode 6 and a source electrode are formed at the same time COPYRIGHT: (C)1979,JPO&Japio

Inventors

• 👤 Takeaki Okabe
• 👤 Isao Yoshida
• 👤 Shikayuki Ochi
• 👤 Minoru Nagata

Bibliographic Details