Monitoring method of line widths

Abstract

Abstract PURPOSE: To simplify the monitoring method of line widths by using the original picture having a plurality of positive patterns and negative patterns of stepwise varied line widths, performing photoetching while reversing the stepwise increase are decrease of line widths and mutually comparing the line widths having been formed. CONSTITUTION: A plurality of positive patterns 1 and a plurality of negative patterns 2 are formed on a mask being the original picture, and these patterns are provided parallel with the line widths thereof being varied stepwise at each specified value respectively. And yet, the increase and decrease in the patterns are made in opposite directions and are corresponded to monitoring pellets. Next, photo resist process is performed by using this mask and the positive and negative patterns corresponding to the monitor pellet portions 4 of a semiconductor wafer 3 are formed. If at this time the exposure time is adequate, the line widths of the exposed patterns become exactly equal in the pattern portions of the same line width, but if the exposure time is excessive or insufficient, the patterns in the deviated directions align and the inadequateness thereof is readly identified COPYRIGHT: (C)1979,JPO&Japio

Inventors

• 👤 Ryoji Tokari

Bibliographic Details