Photomask material

Abstract

Abstract PURPOSE: To form a photomask material which has low back side reflectance, suffers little side etching, and is not charged with static electricity, by superposing a chromium film of a specific thickness, back side reflection preventing intermediate film, a chromium film, etc. upon a substrate covered with a transparent electrically conductive film. CONSTITUTION: Transparent electrically conductive film 2 made of indium oxide, tin oxide, etc. with a surface resistance less than about 10 KΩ/square is formed on transparent substrate 1. On substrate 1, chromium film 3 of 15mμ or below in thickness, chromium oxide-containing intermediate layer 4, mask base chromium film 5, surface reflection preventing chromium oxide film 6, etc. are successively formed in layers by vacuum deposition or sputtering. The total thickness of film 3 and layer 4 is about 40mμ or below COPYRIGHT: (C)1979,JPO&Japio

Inventors

• 👤 Kunio Sakurai
• 👤 Kunio Masumoto
• 👤 Hiroshi Ito

Bibliographic Details