Semiconductor device

Abstract

Abstract PURPOSE: To obtain a semiconductor device which protects cracking of the protecting film occuring at the time of bonding and is improved of bondability. CONSTITUTION: Al wiring 16 is formed on P + layer 15 and is connected to pad electrode 18 of gold via underlying metal 17. The pad 18 extends onto field oxide film 19 and is bonded to lead 20. A base 21 is provided under the pad 18. Hence, the electroad 18 surface produces a serration as much as the total of the thickness of the base 21 and the thickness of the film 19 on the wiring 16 and the bond part of the lead 20. Hence, at the time of bonding the lead 20, no load is exerted upon the protecting film 14 around the wiring 16 and therefore no cracking occurs and the wiring becomes non-corrosive. Since the pad surface on the top of the base 21 is flat, bondability is good COPYRIGHT: (C)1979,JPO&Japio

Inventors

• 👤 Eiji Oi
• 👤 Tadayasu Nakajima

Bibliographic Details