JPS5239378A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Silicon-gated mos type semiconductor device
Assignee: Seiko Epson Corp
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Filing: 1975-09-23
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Granted: —
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Expires: 1995-09-23
Abstract
Abstract PURPOSE: To increase the relaibility of connection between lead wire and pad after bonding by leaving polycrystalline Si on the portion of bonding pad. COPYRIGHT: (C)1977,JPO&Japio
Inventors
- 👤 Taku Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-30 08:38
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/90; H10W72/071; H10W72/075; H10W72/07551; H10W72/50; H10W72/531; H10W72/536; H10W72/59; H10W72/921; H10W72/923; H10W72/981; H10W72/983
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