Manufacture for semiconductor device

Abstract

Abstract PURPOSE: To enable the wiring layer formation not causing open wire on the substrate having unevenness on the surface, by etching the substrate through taking the pattern of PSG film performing heat treatment as a mask, in etching the corrosionproof insulation layer formed on the semiconductor substrate. CONSTITUTION: Thin gate oxide film 12 is formed on the Si substrate 11 and the Si gate electrode 14 is placed on it, and the Si wiring 15 is placed on the thick field oxide film 13 formed. Next, the source and drain region 16 is formed by diffusion on the region exposed on the substrate 11, the Si 3 N 4 film 17 is thinly grouwn with gas phase growing method using SiH 4 and NH 3 on the entire surface, and on it, the PSG film 18 including P in high concentration is thickly coated. After that, the film 18 is opened with etching for the hole 19, exposing the film 17 and softening the film 18 whth heat treatment under O 2 atomosphere including water vapor at more than 1000°C. Next, the film 17 is removed by etching by taking the film 18 as a mask, providing the opening 20, and the wiring layer 21 is coated from the substrate 11 surface to the film 18 in slope COPYRIGHT: (C)1979,JPO&Japio

Inventors

• 👤 Kazuhiko Tsuji
• 👤 Takashi Osone

Bibliographic Details