Patent JPS5437690A successfully refreshed from Google Patents.
JPS5437690A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Manufacture for semiconductor device
Assignee: NEC Corp
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Filing: 1977-08-30
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Granted: —
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Expires: 1997-08-30
Abstract
Abstract PURPOSE: To establish the resistor uniform in the resistance value and high in the resistance value with good reproducibility, by performing heat treatment again under H 2 atmosphere, after coating polycrystal Si layer selectively via the insulation film on the semiconductor substrate and activating with heat treatment at more than 700°C with ion implantation. COPYRIGHT: (C)1979,JPO&Japio
Inventors
- 👤 Yasutaka Ikushima
- 👤 Takehiko Kubota
- 👤 Tsutomu Tashiro
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-03 10:13
CPC Classifications
—
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