Patent JPS5437584A successfully refreshed from Google Patents.
JPS5437584A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Field effect semiconductor device of insulation gate type
Assignee: NEC Corp
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Filing: 1977-08-29
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Granted: —
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Expires: 1997-08-29
Abstract
Abstract PURPOSE: To manufacture a short-channel IGFET by forming some parts of a source and drain of an inversion layer formed selectively near the surface of a substrate. COPYRIGHT: (C)1979,JPO&Japio
Inventors
- 👤 Tadashi Kuragami
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-31 10:14
CPC Classifications
—
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