Patent US5318632A successfully refreshed from Google Patents.
Patent JPS543473A successfully refreshed from Google Patents.
JPS543473A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Manufacture of semiconductor device
Assignee: Fujitsu Ltd
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Filing: 1977-06-09
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Granted: —
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Expires: 1997-06-09
Abstract
Abstract PURPOSE: To increase the adhesion between the wafer and the resist layer as well as to facilitate an easy minute processing, by converting the surface of the resist film formed on the semiconductor wafer into a deterioration layer through a plasma treatment and then giving a thermal treatment to the deterioration layer. COPYRIGHT: (C)1979,JPO&Japio
Inventors
- 👤 Chuichi Takada
- 👤 Ryoji Abe
- 👤 Makoto Serigano
- 👤 Kuniaki Makabe
- 👤 Shoji Minagawa
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-09 04:21
CPC Classifications
—
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
JPS4933573A
Cited
JPS50154066A
Cited
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