Patent JPS5421284A successfully refreshed from Google Patents.
JPS5421284A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Field effect transistor of longitudinal junction type
Assignee: Mitsubishi Electric Corp
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Filing: 1977-07-19
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Granted: —
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Expires: 1997-07-19
Abstract
Abstract PURPOSE: To obtain a large power and greater voltage amplification factor at the same time, by increasing the reach-through voltage through decreasing the extension of the depletion layer leading between the gate and the source, when reverse voltage is applied between the source and the gate. COPYRIGHT: (C)1979,JPO&Japio
Inventors
- 👤 Yoshito Ikuwa
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-02 10:32
CPC Classifications
—
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